Fabrication of self-assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant
- 30 June 1999
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 47 (1-4) , 251-253
- https://doi.org/10.1016/s0167-9317(99)00207-5
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfacesApplied Physics Letters, 1998
- Stimulated emission from optically pumped GaN quantum dotsApplied Physics Letters, 1997
- High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1997
- Self-assembling GaN quantum dots on AlxGa1−xN surfaces using a surfactantApplied Physics Letters, 1996