Current Status Of Ion Projection Lithography

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Abstract
Ion beam lithography is developed in three directions: Focused (FIBL), Masked (MIBL) and Ion Projection Lithography (IPL). IPL uses ions as information carrier in a demagnifying step-and-repeat exposure system. With an Ion Projection Lithography Machine (IPLM) a geometrical resolution < 0.25 μm can be obtained combined with a very high depth of focus:more than 100 μm. The high power densities possible with IPL permit not only pattern transfer in conventional organic resists but extend lithography to new processes using resistless ion beam modification techniques of materials. Experimental results obtained with a laboratory type Ion Projection Lithography Machine IPLM-01 are presented.

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