First SiC dynistor
- 4 August 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (16) , 1031-1033
- https://doi.org/10.1049/el:19880702
Abstract
A four-layer dynistor has been made from SiC for the first time. Switching voltage is in the range from 30–50 V and switching time is about 10−8 s. The structure has been fabricated with a modified liquid-phase epitaxy (LPE).Keywords
This publication has 1 reference indexed in Scilit:
- Chapter 9 Silicon Carbide Junction DevicesPublished by Elsevier ,1971