Thermophotovoltaic devices utilizing a back surface reflector for spectral control

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Abstract
The back surface reflector (BSR) represents the spectral‐control technology that offers the highest spectral utilization factor, F u , where F u is defined as the fraction of the total absorbed radiation with energy greater than the semiconductor bandgap. In order for this technology to succeed, an integrated photovoltaic cell—spectral control thermophotovoltaic device design is required which simultaneously minimizes free carrier absorption and series resistance losses. For this study, BSR technology was developed for GaSb, InAs, and InP substrate systems. Reflection and contact resistance results will be presented for the above material systems. To date, F u ≳80% have been obtained for all three material systems, with potential for F u ≳90%.

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