Electrical Characteristics of Metal Contacts to Boron-Doped Diamond Epitaxial Film
- 1 May 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (5R)
- https://doi.org/10.1143/jjap.28.758
Abstract
Current-voltage characteristics have been obtained for various metal contacts formed on boron-doped diamond epitaxial film prepared on synthesized Ib diamond by the microwave plasma-assisted chemical vapor deposition method. Ti contacts and W contacts have exhibited good ohmic and Schottky properties, respectively. For the first time, we have fabricated Schottky diodes on boron-doped diamond epitaxial films using these contacts and investigated their properties.Keywords
This publication has 7 references indexed in Scilit:
- Electrical characteristics of Schottky diodes fabricated using plasma assisted chemical vapor deposited diamond filmsApplied Physics Letters, 1988
- High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamondIEEE Electron Device Letters, 1987
- Characterization of conducting diamond filmsVacuum, 1986
- On the lattice scattering and effective mass of holes in natural diamondSolid State Communications, 1979
- Photothermal Ionization and Photon-Induced Tunneling in the Acceptor Photoconductivity Spectrum of Semiconducting DiamondPhysical Review B, 1968
- Crystallization of Diamond and GraphiteThe Journal of Chemical Physics, 1967
- Semiconducting Diamonds as ThermistorsReview of Scientific Instruments, 1960