Rational growth of highly oriented amorphous silicon nanowire films
- 1 June 2003
- journal article
- research article
- Published by Elsevier in Chemical Physics Letters
- Vol. 374 (5-6) , 626-630
- https://doi.org/10.1016/s0009-2614(03)00781-4
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Logic Gates and Computation from Assembled Nanowire Building BlocksScience, 2001
- Logic Circuits with Carbon Nanotube TransistorsScience, 2001
- Ultraviolet-emitting ZnO nanowires synthesized by a physical vapor deposition approachApplied Physics Letters, 2001
- Synthesis and optical properties of gallium arsenide nanowiresApplied Physics Letters, 2000
- Controlled growth and electrical properties of heterojunctions of carbon nanotubes and silicon nanowiresNature, 1999
- Synthesis of nano-scale silicon wires by excimer laser ablation at high temperatureSolid State Communications, 1998
- A Laser Ablation Method for the Synthesis of Crystalline Semiconductor NanowiresScience, 1998
- Synthesis of Gallium Nitride Nanorods Through a Carbon Nanotube-Confined ReactionScience, 1997
- Growth of silicon nanowires via gold/silane vapor–liquid–solid reactionJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- Helical microtubules of graphitic carbonNature, 1991