Thermal Instabilities and Hot Spots in Junction Transistors

• 1 September 1962
• conference paper
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• No. 00972088,p. 194-203
• https://doi.org/10.1109/irps.1962.359995

Abstract

Keywords

• POWER TRANSISTORS
• ELECTRIC BREAKDOWN
• CURRENT DENSITY
• TEMPERATURE DISTRIBUTION
• CURRENT DISTRIBUTION
• ALLOYING
• HEAT SINKS
• SILICON
• TEMPERATURE SENSORS
• TEMPERATURE DEPENDENCE