Characterization of individual electron traps in amorphous Si by telegraph noise spectroscopy
- 27 October 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (17) , 1107-1109
- https://doi.org/10.1063/1.97436
Abstract
We have used telegraph noise spectroscopy to study the properties of individual localized electron traps of a particular type in thin layers (t<∼6 nm) of rf sputtered amorphous Si and amorphous Si:H. The results indicate that these traps have bistable ionic configurations: The trapping kinetics are dominated by transitions between two different ionic configurations with an associated change in trapped charge. Above ∼20 K, configurational transitions are by thermally activated hopping; below 20 K, transitions appear to be induced by zero-point oscillations.Keywords
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