Noise associated with JFET gate current resulting from avalanching in the channel
- 1 May 1978
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (5) , 798-799
- https://doi.org/10.1016/0038-1101(78)90017-5
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- On the gate-to-drain current ratio in junction FETs at low temperatureSolid-State Electronics, 1978