Sealed-ampoule diffusion of zinc into Ga1−xAlxAs at 650 °C
- 1 April 1988
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (7) , 2454-2455
- https://doi.org/10.1063/1.341020
Abstract
The diffusivity of the zinc Ga1−xAlxAs at 650 °C was studied using sealed‐ampoule diffusion. Whereas Ageno, Roedel, Mellen, and Escher [Appl. Phys. Lett. 4 7, 1193 (1985)] found dramatic decreases in the zinc diffusivity at xAl≊0.05 and xAl≊0.20 using open‐tube diffusion, the results of the present study show that the sealed‐ampoule technique results in a more uniform dependence of the zinc diffusivity on aluminum concentration.This publication has 4 references indexed in Scilit:
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- Study on Zn Diffusion in GaAs and AlxGa1-xAs (x≤0.4) at Temperatures from 726° to 566°CJapanese Journal of Applied Physics, 1983
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- Diffusion of zinc in gallium arsenide under excess arsenic pressureJournal of Physics and Chemistry of Solids, 1968