Wetting in random systems
- 3 February 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 56 (5) , 472-475
- https://doi.org/10.1103/physrevlett.56.472
Abstract
Complete wetting and critical wetting transitions are studied in d-dimensional systems with quenched random impurities and general interactions. New but more universal singular behavior is predicted: e.g., under random fields the wetting-layer thickness at complete wetting should diverge as for d=3, where h measures the deviation from the bulk-phase boundary. Wetting exponents are expressed in terms of a single spatial anisotropy or roughness exponent, ζ, defined via ∼ where and are the wetting correlation lengths.
Keywords
This publication has 14 references indexed in Scilit:
- Scaling and critical slowing down in random-field Ising systemsPhysical Review Letters, 1986
- Depinning by Quenched RandomnessPhysical Review Letters, 1985
- Commensurate-Incommensurate Transitions with Quenched Random ImpuritiesPhysical Review Letters, 1985
- Critical effects at complete wettingPhysical Review B, 1985
- Pinning and Roughening of Domain Walls in Ising Systems Due to Random ImpuritiesPhysical Review Letters, 1985
- Critical Behavior in Gels Saturated with Binary Liquid MixturesPhysical Review Letters, 1984
- Impurity pinning, interface roughening, and the incommensurate—commensurate transitionPhysica Status Solidi (b), 1983
- Surface tension, roughening, and lower critical dimension in the random-field Ising modelPhysical Review B, 1983
- Effective field theory for interface delocalization transitionsPhysical Review B, 1983
- Systematics of multilayer adsorption phenomena on attractive substratesPhysical Review B, 1982