Wetting in random systems

Abstract
Complete wetting and critical wetting transitions are studied in d-dimensional systems with quenched random impurities and general interactions. New but more universal singular behavior is predicted: e.g., under random fields the wetting-layer thickness at complete wetting should diverge as h1/2 for d=3, where h measures the deviation from the bulk-phase boundary. Wetting exponents are expressed in terms of a single spatial anisotropy or roughness exponent, ζ, defined via ξξ?ζ where ξ and ξ? are the wetting correlation lengths.