Automatic electrochemical profiling of Hall mobility in semiconductors

27 September 1979

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 15 (20) , 648-650
https://doi.org/10.1049/el:19790461

Abstract

High-resolution automatic profiling of Hall mobility in semiconductors is achieved through the use of an electrolytic contact, both as a Schottky gate and as a means of controlled dissolution. Application to multilayer m.b.e. GaAs is shown as an example.

Keywords

ELECTROLYTIC CONTACT
GAAS
SEMICONDUCTOR ELECTROLYTE BOUNDARIES
ELECTROCHEMICAL HALL MOBILITY PROFILING
ANODIC DISSOLUTION
CARRIER MOBILITY
SCHOTTKY GATE

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