Reliable 1.2W CW red-emitting (Al)GaInP diode laser array with AlGaAs cladding layers
- 7 January 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (1) , 101-102
- https://doi.org/10.1049/el:19930066
Abstract
A 1.2W CW AlGaInP/GaInP laser array operating at a wavelength of 690nm is demonstrated. The array consists of 36 lasers on 16 μm centres with 8μ-wide ridge waveguides and has been mounted junction-side down onto a diamond heatsink. Excellent reliability has been proven by lifetime tests at 1.1 W for over 2300 h.Keywords
This publication has 1 reference indexed in Scilit:
- Low-threshold strained GaInP quantum-well ridge lasers with AlGaAs Cladding LayersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005