Silicon dopant imaging by dissipation force microscopy
- 25 October 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (18) , 2785-2787
- https://doi.org/10.1063/1.125149
Abstract
Noncontact damping of a cantilever vibrating near a silicon surface was used to measure localized electrical dissipation. The dependence of the damping on tip-sample distance, applied voltage, carrier mobility, and dopant density was studied for n- and p-type silicon samples with dopant densities of Dopant imaging with 150 nm spatial resolution was demonstrated.
Keywords
This publication has 11 references indexed in Scilit:
- Two-dimensional dopant profiling of patterned Si wafers using phase imaging tapping mode atomic force microscopy with applied biasesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- Theory of magnetoelastic dissipation due to domain wall width oscillationJournal of Applied Physics, 1998
- Eddy current microscopyApplied Physics A, 1998
- Dynamic force microscopy by means of the phase-controlled oscillator methodJournal of Applied Physics, 1997
- ULTRAHIGH VACUUM ATOMIC FORCE MICROSCOPY: TRUE ATOMIC RESOLUTIONSurface Review and Letters, 1997
- Magnetic dissipation force microscopyApplied Physics Letters, 1997
- Attonewton force detection using ultrathin silicon cantileversApplied Physics Letters, 1997
- Magnetic force microscopy utilizing an ultrasensitive vertical cantilever geometryApplied Physics Letters, 1992
- Local electrical dissipation imaged by scanning force microscopyApplied Physics Letters, 1991
- Frequency modulation detection using high-Q cantilevers for enhanced force microscope sensitivityJournal of Applied Physics, 1991