Microwave noise performance of AlGaN/GaN HEMTs
- 20 January 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (2) , 175-176
- https://doi.org/10.1049/el:20000152
Abstract
The authors have characterised the microwave noise performance of AlGaN/GaN HEMTs epitaxially grown on insulating SiC substrates. The minimum noise figure for 0.25 µm gate-length devices was measured to be 0.77 dB at 5 GHz and 1.06 dB at 10 GHz. The measured minimum noise figures are comparable to those exhibited by GaAs-based FETs, which demonstrates the viability of AlGaN/GaN HEMTs for low-noise applications.Keywords
This publication has 3 references indexed in Scilit:
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