Effect of heavy doping on the properties of high-low junction
- 1 December 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 25 (12) , 1412-1414
- https://doi.org/10.1109/T-ED.1978.19366
Abstract
The minority carrier reflecting properties of the high-low junction have been studied, taking into account the heavy doping effects. It has been observed that the junction leakage velocity attains a minimum value for a particular value of impurity concentration in the heavily doped region, when an empirical relationship giving bandgap narrowing as a function of impurity concentration in silicon is utilized.Keywords
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