MOCVD growth and characterization by Raman scattering, x-ray diffraction and Auger spectroscopy of short period GaAs/AlAs and GaAs/Ga1−xAlxAs superlattices
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 77 (1-3) , 546-552
- https://doi.org/10.1016/0022-0248(86)90350-7
Abstract
No abstract availableKeywords
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