Growth of single crystal β-SiC films on a Si substrate by a direct carbonisation method

27 September 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (20) , 1638-1640
https://doi.org/10.1049/el:19901049

Abstract

Single crystal β-SiC films have been formed on a Si substrate by a thermal reaction between the substrate and carbon atoms sublimed from a high purity graphite source. The film properties are characterised by the Rutherford backscattering technique and an electron diffraction method. It has been demonstrated that single crystal β-SiC films are formed on a (111)-Si substrate by the thermal reaction above 900°C between the substrate and carbon atoms.

Keywords

SINGLE CRYSTAL BETA SIC FILMS
THERMAL REACTION
BETA SIC-SI FILMS
SI SUBSTRATE
HETEROEPITAXY
RUTHERFORD BACKSCATTERING
HIGH PURITY GRAPHITE SOURCE
SUBLIMED C
ELECTRON DIFFRACTION METHOD
DIRECT CARBONISATION METHOD
FILM PROPERTIES
900 DEGC
(111) SUBSTRATE

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