High External Quantum Efficiency of Electroluminescence from Photoanodized Porous Silicon
- 1 March 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (3B) , L303
- https://doi.org/10.1143/jjap.37.l303
Abstract
Porous silicon (PS) light emitting diodes (LEDs) were fabricated from p+n Si wafers by photoanodization. The maximum external quantum efficiency (ηext) of electroluminescence (EL) from PS-LED up to 0.8%, which is the highest ever reported for PS-LEDs with solid state contact, was achieved under pulsed operation with 1% duty in ambient air. However, we found that PS-LED with a high ηext was accompanied by the problem of high series resistance.Keywords
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