No blister formation Pd/Pt double metal gate MISFET hydrogen sensors
- 1 January 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 5 (1) , 14-15
- https://doi.org/10.1109/EDL.1984.25814
Abstract
Blister formation in palladium gate MISFET hydrogen sensors occurs even at low hydrogen pressures and the sensors fail in long-time operation. The blisters in the Pd gate are due to hydrogen-induced lattice expansion of the Pd film. By making a double metal gate of Pd/Pt, the problem is avoided without any loss of the hydrogen sensitivity.Keywords
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