Optically driven silicon-based quantum gates with potential for high-temperature operation
- 27 June 2003
- journal article
- letter
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 15 (27) , L447-L451
- https://doi.org/10.1088/0953-8984/15/27/102
Abstract
We propose a new approach to constructing gates for quantum information processing, exploiting the properties of impurities in silicon. Quantum information, embodied in electron spins bound to deep donors, is coupled via optically induced electronic excitation. Gates are manipulated by magnetic fields and optical light pulses; individual gates are addressed by exploiting spatial and spectroscopic selectivity. Such quantum gates do not rely on small energy scales for operation, so might function at or near room temperature. We show the scheme can produce the classes of gates necessary to construct a universal quantum computer.Keywords
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