Soft x-ray (14 nm) lithography with ultrathin imaging layers and selective electroless metallization

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Abstract
Soft x-ray synchrotron radiation, of wavelength 14 nm, has been used to pattern self- assembled monolayer films, which were then selectively metallized using electroless deposition. Organosilane precursors of the general type RSiX3 (R equals organic functional group; X equals Cl, OCH3) are used to form covalently bound ultrathin films by molecular self-assembly on Si wafers. These films are approximately one monolayer (approximately 1 nm) thick. X-ray exposure was used to remove or transform the R groups in selected areas of the film. The laterally patterned reactivity on the surface was then used as a template for the additive deposition of a thin layer of electroless nickel in the unexposed regions. The Ni metal layer can then be used as a plasma etch mask for pattern transfer. Metal features with linewidths to 2.

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