Scanning electron microscopy and cathodoluminescence of ZnSex Te1 − x p-n junctions

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Abstract
The structure of ZnSex Te1−xp‐n junction diodes has been examined under cathode‐ray excitation. The cathodoluminescence efficiency of p‐type ZnSex Te1−x drops by a factor of 102−103 between 77 and 300 °K, whereas that of n‐type material stays approximately constant in the same temperature range. Junction profiles obtained by cathodoluminescence, cathodoconductivity, and secondary electron emission indicate that the radiative recombinations occur on the p‐type side of the diodes. The large drop in the diode efficiency between 77 and 300 °K is thus attributable to the decrease of the radiative recombination efficiency of p‐type ZnSex Te1−x.

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