Logic and memory elements using two-valley semiconductors
- 1 April 1967
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 55 (4) , 584-585
- https://doi.org/10.1109/proc.1967.5607
Abstract
Experimental results are given for bulk n-GaAs diodes when used as a two-state memory element and as a logic gate. An additional contact near the cathode improves the triggering sensitivity and isolates the input from the output. Bulk devices will ultimately operate at higher speeds than junction devices.Keywords
This publication has 3 references indexed in Scilit:
- A voltage tunable Gunn-effect oscillatorProceedings of the IEEE, 1967
- Stable Space-Charge Layers in Two-Valley SemiconductorsJournal of Applied Physics, 1966
- Coherent high field oscillations in long samples of GaAsProceedings of the IEEE, 1965