CHARACTERISTIC DEFECTS AT THE Si-SiO2 INTERFACE
- 1 January 1980
- book chapter
- Published by Elsevier
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafersJournal of Applied Physics, 1979
- Measurement of interface defect states at oxidized silicon surfaces by constant-capacitance DLTSJournal of Vacuum Science and Technology, 1979
- Energy-resolved DLTS measurement of interface states in MIS structuresApplied Physics Letters, 1979