Thermal diffusion of tin in GaAs from a spin-on SnO2/SiO2 source
- 1 July 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (1) , 89-91
- https://doi.org/10.1063/1.91714
Abstract
The thermal diffusion of Sn in GaAs from a spin‐on SnO2/SiO2 source is described. The processing steps leading to reproducible electrical charcteristics are presented. Electrical measurements, secondary‐ion mass spectroscopy, and Rutherford backscattering analysis have been used to study the diffusion during various processing sequences. The results show that this source can make Sn atoms available for diffusion at very low temperatures and produce heavily doped, shallow n+ layers that may be of interest for GaAs field‐effect transistor technology.Keywords
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- Diffusion of Tin into GaAs from Doped SiO[sub 2] Film SourcesJournal of the Electrochemical Society, 1971
- Gallium Arsenide Planar TechnologyIBM Journal of Research and Development, 1966