Electrical transient study of negative resistance in SOI MOS transistors

4 January 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (1) , 73-74
https://doi.org/10.1049/el:19900048

Abstract

Using electrical transients, we have investigated the negative resistance observed in the output characteristics at high gate voltages in MOS transistors made in SOI films. We show experimentally that this effect is due to a temperature rise in the device itself. This results from the poor thermal conductivity of the buried oxide of the SOI structure.

Keywords

MOSFETS
TEMPERATURE RISE
SOI FILMS
OUTPUT CHARACTERISTICS
ELECTRICAL TRANSIENTS
SOI MOS TRANSISTORS
THERMAL MODELLING
POOR THERMAL CONDUCTIVITY
NEGATIVE RESISTANCE
BURIED OXIDE
HIGH GATE VOLTAGES

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