Photomagnetoelectric Effect in Thinp-Type Silicon Crystals

The photomagnetoelectric (PME) open-circuit voltage has been measured at room temperature for thin $p$-type silicon samples subjected to various surface treatments The effect was found to increase linearly with the magnetic field up to 20 kG, but for all surface treatments showed sublinear behavior with photon flux even at relatively low light intensities. This effect, which was more pronounced at shorter wavelengths, could be attributed to an accumulation layer in the space-charge region of the crystal. Toward longer wavelengths the PME voltage versus light intensity became linear and could be used for calculating an effective surface recombination velocity $S^{*}$ at the border between the space-charge region and the bulk crystal.