Changes in silicon samples bombarded by 900–2300 eV hydrogen ions
- 1 January 1984
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 111 (3) , 277-284
- https://doi.org/10.1016/0040-6090(84)90149-4
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Studies of the hydrogen passivation of silicon grain boundariesJournal of Applied Physics, 1981
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- Applications of a Kaufman ion source to low energy ion erosion studiesJournal of Vacuum Science and Technology, 1979