Possibility of incongruous interface behavior of In on GaAs(110)
- 15 November 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 32 (10) , 6902-6903
- https://doi.org/10.1103/physrevb.32.6902
Abstract
Photoemission spectroscopy has been used to study the Schottky-barrier formation of In on n- and p-type GaAs(110) interfaces. Our result is different from that reported by R. R. Daniels et al. [J. Vac. Sci. Technol. A 2(2), 831 (1984)]. It is suggested that this incongruous behavior of In on GaAs(110) is due to the kinetics of interface defect formation. Various experimental details which may affect the kinetics are also discussed.Keywords
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