Low-temperature epitaxy using Si2H6
- 1 October 1990
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 19 (10) , 1095-1100
- https://doi.org/10.1007/bf02651987
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Low Temperature Silicon Epitaxy Using Si2 H 6Journal of the Electrochemical Society, 1987
- Novel selective poly - and epitaxial - Silicon growth (SPEG) technique for ULSI processingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Advanced bipolar process using selective poly- and epitaxial-Si (SPEG) techniquePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- A novel MOS device structure with S/D contacts over oxide (COO)Published by Institute of Electrical and Electronics Engineers (IEEE) ,1985