Amorphous silicon heterojunctions studied by transient photoconductivity

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Abstract
Transient photoconductivity is used to characterize the electronic properties of a‐Si:H interfaces. We show how it is possible to measure the sign and width of the surface band bending, and the density of interface states. At a silicon nitride/a‐Si:H interface we find an electron accumulation layer. The interface state density is much larger when the nitride is deposited after the a‐Si:H rather than vice versa. The native oxide results in an electron depletion layer, and the same is true of the other oxide layers, although under some circumstances, accumulation is observed.

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