Morphology on GaAs surfaces grown by metalorganic chemical vapor deposition and molecular beam epitaxy
- 1 March 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 136 (1-4) , 114-117
- https://doi.org/10.1016/0022-0248(94)90393-x
Abstract
No abstract availableKeywords
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- A High Resolution Cathodoluminescence (LC-CL) Study on GaAs-AIGaAs InterfaceMRS Proceedings, 1988
- One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985