Anisotropic-Defect Production in Compound Semiconductors by Electron Irradiation
- 22 February 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 48 (8) , 568
- https://doi.org/10.1103/physrevlett.48.568
Abstract
DOI: https://doi.org/10.1103/PhysRevLett.48.568Keywords
This publication has 3 references indexed in Scilit:
- Anisotropic-Defect Introduction in GaAs by Electron IrradiationPhysical Review Letters, 1981
- Identification of the defect state associated with a gallium vacancy in GaAs andPhysical Review B, 1977
- EPR Observation of Close Frenkel Pairs in Irradiated ZnSePhysical Review Letters, 1974