Complete identification of the Ti-related levels in GaP
- 1 June 1991
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 50 (1) , 496-499
- https://doi.org/10.1016/0169-4332(91)90225-9
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Identification of the Ti donor level in GaPSemiconductor Science and Technology, 1991
- Photoluminescence excitation spectroscopy of Ti3+in GaPSemiconductor Science and Technology, 1991
- Electronic and optical properties of Ti-doped GaAs and InP; semi-insulating InPJournal of Applied Physics, 1989
- Electron Paramagnetic Resonance of Ti3+ in GapPhysica Status Solidi (b), 1988
- Optical and Electrical Studies of GaP: TiPhysica Status Solidi (b), 1988
- Identification of the titanium-related levels in GaPApplied Physics Letters, 1987
- Zeeman spectroscopy on Ti-doped GaAs and GaPSemiconductor Science and Technology, 1987
- Electron Paramagnetic Resonance of Titanium in GaPPhysica Status Solidi (b), 1987
- Growth of double doped semi-insulating indium phosphide single crystalsJournal of Crystal Growth, 1987
- On the position of energy levels related to transition-metal impurities in III-V semiconductorsJournal of Physics C: Solid State Physics, 1982