Integration of GaAs LEDs with silicon circuits by epitaxial lift-off

Publisher Website
Google Scholar
Abstract
Epitaxial liftoff has emerged as a viable technique to integrate GaAs with silicon. The technique relies on the separation of a thin epi-GaAs film from its substrate followed by direct bonding of the thin film to a silicon substrate. The silicon substrate has to meet certain planarity and smoothness conditions in order to obtain high quality bonding. Unfortunately, processed silicon IC chips do not satisfy these conditions. In this paper, we report on the results of two different planarization techniques, plasma etch back and chemical mechanical polishing, to integrate GaAs LEDs with silicon circuits using epitaxial liftoff. A 4 by 8 array of GaAs LEDs have been integrated with silicon driver circuits using plasma etch back. We also have lifted off areas as large as 500 mm2 and bonded them on five inch device wafers by chemical mechanical polishing.

This publication has 0 references indexed in Scilit: