Stimulated Raman scattering from 20-Å layers of silicon on sapphire
- 1 October 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (7) , 595-597
- https://doi.org/10.1063/1.92098
Abstract
We have developed a novel triply modulated stimulated Raman gain spectrometer which reduces unwanted background effects by over 105. This has allowed the high resolution (Δν=1 cm−1) measurement of 20 Å of Si on sapphire with a signal‐to‐noise ratio of 100, with only 2 min of data collection. This sensitivity is several orders of magnitude larger than spontaneous Raman scattering.Keywords
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