A nonlinear capacitance cancellation technique and its application to a CMOS class AB power amplifier
- 13 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A nonlinear cancellation technique is developed specifically for MOS class AB power amplifiers. This technique utilizes a PMOS transistor at the amplifier input to cancel the variation of the input capacitance, thus improving the overall amplifier linearity. A monolithic CMOS RF power amplifier with this technique is designed and fabricated in a standard 0.6 /spl mu/m CMOS technology. The prototype single-stage amplifier has a measured drain efficiency of 40% and a power gain of 7 dB at 1.9 GHz. Linearity measurements show that the new amplifier has over 10 dB of IM/sub 3/ improvement and 6 dB of ACPR improvement compared with the traditional NMOS class AB power amplifier.Keywords
This publication has 5 references indexed in Scilit:
- A 1 W 830 MHz monolithic BiCMOS power amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A LINC transmitterPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 2.5-V, 1-W monolithic CMOS RF power amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Low voltage, high efficiency GaAs Class E power amplifiers for wireless transmittersIEEE Journal of Solid-State Circuits, 1995
- Amplifier linearization using a digital predistorter with fast adaptation and low memory requirementsIEEE Transactions on Vehicular Technology, 1990