Noncontact Carrier Lifetime Depth Profiling of Ion-Implanted Si Using Photothermal Radiometry
- 1 June 1997
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 161 (2) , R13-R14
- https://doi.org/10.1002/1521-396x(199706)161:2<r13::aid-pssa999913>3.0.co;2-h
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Non-contacting measurements of photocarrier lifetimes in bulk- and polycrystalline thin-film Si photoconductive devices by photothermal radiometryJournal of Applied Physics, 1996
- Hamiltonian plasma-harmonic oscillator theory: Generalized depth profilometry of electronically continuously inhomogeneous semiconductors and the inverse problemJournal of Applied Physics, 1996