Temperature-dependent polarization behavior of semiconductor lasers
- 1 October 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (7) , 731-733
- https://doi.org/10.1063/1.95378
Abstract
InGaAsP lasers are found to operate in a pure TM mode or in a mixture of TE and TM modes at low temperatures. The polarization change at low temperatures is attributed to a thermal-stress effect in the InGaAsP active layer. However, none of the AlGaAs/GaAs lasers tested exhibits such behavior because the thermal stress in the active layer is significantly offset by the GaAs substrate.Keywords
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