On the modification of the einstein relation for semiconductor inversion layers
- 16 November 1976
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 38 (1) , K85-K88
- https://doi.org/10.1002/pssa.2210380168
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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- Experimental Verification of the Surface Quantization of an-Type Inversion Layer of Silicon at 300 and 77°KPhysical Review B, 1972
- Mobility Anisotropy and Piezoresistance in Silicon p-Type Inversion LayersJournal of Applied Physics, 1968
- Generalized Einstein relation for degenerate semiconductorsProceedings of the IEEE, 1968
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- On the diffusion theory of rectificationProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1952