Residual stress distribution in the direction of the film normal in thin diamond films

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Abstract
The residual stress distribution in the direction of the film normal in thin diamondfilms deposited on Si substrate has been evaluated together with the distribution of Young’s modulus. The films were deposited on the substrate by the microwavechemical vapor deposition method. It has been observed that the curvature of the diamondfilms delaminated from the Si substrate is functionally dependent on the film thickness. Young’s modulus, which has been estimated by the film bending test in conjunction with a finite element method of analysis, appears to be gradually decreasing towards the adhesion interface. On the basis of detailed measurement of curvature and with the aid of Raman spectroscopy, the residual strain distribution in the film has been evaluated. Although the average intrinsic stress was tensile as reported earlier, we have found that a huge compression concentrates in the very small region near the adhesion interface. This finding shows evidence that something happens on the interface, which is absolutely different from the subsequent process of film growth.