Pressure Effect on Vacancy Formation in Gold

Abstract
99.999% pure gold wires were resistance heated to 680°C in a gaseous medium at pressures between 400 and 11 000 atmospheres and quenched by turning off the heating current. The temperature decayed exponentially with a half-life of 1.6×102 sec. The logarithm of the quenched-in electric resistance ΔR decreased linearly with increasing pressure. From the pressure effect on ΔR an activation volume for vacancy formation at 680°C of ΔVf=(9.16±0.68)×1024cm3=0.53±0.04 atomic volume is derived, assuming that the quenched-in resistivity is due to the formation of single vacancies. In the pressure range investigated, ΔVf is apparently independent of the pressure. Using ΔVf and Bauerle and Koehler's relationship between resistivity and fractional volume change during recovery, the electric resistivity of vacancies is (1.8±0.4)×106 Ω cm/at.% and the vacancy concentration after quenching from 680°C at room pressure with 1.6×102 sec half-life of the temperature decay is (2.4±0.5)×105. The present data are in good agreement with those reported by DeSorbo from a calorimetric study of quenched foil. The present defect concentration is about 50% of the value extrapolated to 680°C from the data of Simmons and Balluffi, who obtained the vacancy concentration in thermal equilibrium near the melting temperature.