One-dimensional hetero-junction structure in polysilane
- 15 December 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (12) , 6380-6382
- https://doi.org/10.1063/1.346885
Abstract
A new model is presented for an electronic structure of polysilane which contains plural phases. This structure corresponds to the heterojunction structure between one-dimensional semiconductors with different band gaps (one-dimensional heterojunction model, 1-D HJ model). Measurements of UV absorption, excitation, and emission spectra show that photoexcited energy transfers between phases and recombines radiatively in smaller band-gap regions. The 1D HJ model explains this mechanism and also explains the origin of the large differences in mobilities between electrons and holes in polysilanes.This publication has 17 references indexed in Scilit:
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