One-dimensional hetero-junction structure in polysilane

Abstract
A new model is presented for an electronic structure of polysilane which contains plural phases. This structure corresponds to the heterojunction structure between one-dimensional semiconductors with different band gaps (one-dimensional heterojunction model, 1-D HJ model). Measurements of UV absorption, excitation, and emission spectra show that photoexcited energy transfers between phases and recombines radiatively in smaller band-gap regions. The 1D HJ model explains this mechanism and also explains the origin of the large differences in mobilities between electrons and holes in polysilanes.