Na incorporation and diffusion in CuIn/sub 1-x/Ga/sub x/Se/sub 2/

1 January 1996

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

No. 01608371,p. 985-987
https://doi.org/10.1109/pvsc.1996.564295

Abstract

CuIn/sub 1-x/Ga/sub x/Se/sub 2/ based solar cells deposited by vapor phase techniques show significant improvement in performance when Na is present at the growth surface. Evidence is just becoming available concerning how the Na participates in the change in device performance. This work reports on the distribution of Na in CIGS in as grown device-type films, in Na-free films implanted with Na and the effects of annealing of these layers. CIGS thin films were deposited by four-source evaporation and analyzed by secondary ion mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy. Samples were ion implanted and analyzed before and after annealing at 420/spl deg/C. Na segregates rapidly out of CIGS at normal physical vapor deposition temperatures. No Na diffusion at room temperature was observed in samples after six months. The segregation drives Na both to the surface of polycrystalline layers and into the Mo substrate. The segregation ratio for the CIGS/Mo interface is /spl sim/10 at 400/spl deg/C and /spl sim/100 at 600/spl deg/C. Small Na-rich regions can also occur inside CIGS layers. In spite of these observations, Na leads to a strong (112) preferred orientation of CIGS and apparently improves the performance of devices.

Keywords

This publication has 2 references indexed in Scilit:

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Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
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