High-quality GaAs MESFET's grown on Silicon substrates by molecular-beam epitaxy

• 1 July 1985
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
• Vol. 6  (7) , 381-383
• https://doi.org/10.1109/edl.1985.26162

Abstract

Keywords

• GALLIUM ARSENIDE
• MESFETS
• SILICON
• SUBSTRATES
• MOLECULAR BEAM EPITAXIAL GROWTH
• TEMPERATURE
• SEMICONDUCTOR FILMS
• ELECTRON MOBILITY
• DOPING
• COATINGS