Oxidation of lead tunnel barriers in a humidity-controlled oxygen-regulated atmosphere
- 1 November 1977
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (11) , 4627-4629
- https://doi.org/10.1063/1.323523
Abstract
High‐quality reproducible Pb oxide tunneling barriers have been grown using thermal oxidation methods. Junctions were made over a conductance range of 104(Ω cm2)−1 by accurately controlling the humidity in a flow of room‐temperature oxygen. An inspection of the I‐V characteristics in the region eV<2Δ at low temperatures indicates extremely high‐quality barriers with no nontunneling processes shunting the tunneling process.This publication has 5 references indexed in Scilit:
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- Insulating Pb oxide layers formed in a dc oxygen glow dischargeJournal of Applied Physics, 1975
- Oxidation of lead films by rf sputter etching in an oxygen plasmaJournal of Applied Physics, 1974
- Josephson Tunneling Barriers by rf Sputter Etching in an Oxygen PlasmaJournal of Applied Physics, 1971
- Physics of Preparation of Josephson BarriersJournal of Applied Physics, 1968