Infrared Absorption of Indium Antimonide

Publisher Website
Google Scholar
Abstract
Infrared absorption in InSb near the absorption edge has been interpreted as the superposition of two indirect transitions requiring phonons of 100° and 30°, the former transition involving the smaller electronic energy gap. The first transition is consistent with a band scheme having electrons at the center of the zone and holes either at the corner of the zone or about halfway along the [1,1,1] line. The other transition may indicate a second hole with an energy gap about 0.025 ev larger than that of the first.