Optimum doping profile of power MOSFET epitaxial layer
- 1 June 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 29 (6) , 985-987
- https://doi.org/10.1109/T-ED.1982.20818
Abstract
The epitaxial layer resistance of a MOSFET can be slightly reduced by using an optimum doping profile, which exhibits a minimum in the upper half of the layer when the layer thickness is large compared to the cell-to-ceU spacing. A gradual transition from the n epitaxial layer to the n+ substrate is desirable. When current spreading is significant, the resistance may rise as VB2rather than VB2.5.Keywords
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