Structural and Electronic Properties of AlN, GaN And InN, and Band Offsets at AlN/GaN (1010) and (0001) Interfaces
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Ab initiostudy of piezoelectricity and spontaneous polarization in ZnOPhysical Review B, 1994
- First-principles investigation of ferroelectricity in perovskite compoundsPhysical Review B, 1994
- Electronic and structural properties of GaN by the full-potential linear muffin-tin orbitals method: The role of thedelectronsPhysical Review B, 1993
- Semiconductor band structures at zero pressurePhysical Review B, 1992
- III-V nitrides for electronic and optoelectronic applicationsProceedings of the IEEE, 1991
- Soft self-consistent pseudopotentials in a generalized eigenvalue formalismPhysical Review B, 1990
- Ab initiostudy of the spontaneous polarization of pyroelectric BeOPhysical Review Letters, 1990
- Density Functional TheoryPublished by Springer Nature ,1990
- Band Offsets in Lattice-Matched Heterojunctions: A Model and First-Principles Calculations for GaAs/AlAsPhysical Review Letters, 1988